Notícias

Molecular decoration uncovers molybdenum disulphide grain boundaries

Molecular decoration uncovers molybdenum disulphide grain boundaries

Novembro 4, 2015

Molecular decoration uncovers molybdenum disulphide grain boundaries

Molybdenum disulphide (MoS2) is a promising candidate for ultrathin electronics and photodetectors because of its unique optical and electronic properties. In such applications, the characterisation of grain boundaries in the sample or device is of utmost importance. Reporting in Nanotechnology, researchers based at Universidade Federal de Minas Gerais (UFMG) develop an easy method for grain boundary Read more about Molecular decoration uncovers molybdenum disulphide grain boundaries

Achieving a Fermi level shift in graphene without an applied gate

Março 28, 2014

Labtalk Article http://nanotechweb.org/ IOP

A promising route towards nanodevice applications relies on the association of graphene with hexagonal boron nitride (hBN). Its insulating character and planarity allows graphene to reach high mobilities and improve performance. To achieve this, and reporting in Nanotechnology, researchers have analysed the role of point defects on the electronic properties of graphene/hBN compound structures. Read more about Achieving a Fermi level shift in graphene without an applied gate

Nano-ponds modify properties of hexagonal boron nitride layers

Abril 3, 2012

Labtalk Article http://nanotechweb.org/ IOP

Hexagonal boron nitride (h-BN) is well suited as a substrate to form ultra-fast transistors with graphene. In many examples and prototypes that have been reported, h-BN layers are mechanically exfoliated onto silicon oxide supporting substrates. In a subsequent step, graphene layers are laid on the h-BN layer, which enables the fast carrier transport in graphene. Now, researchers at Universidade Federal de Minas Gerais, Brazil, have studied the influence of Read more about Nano-ponds modify properties of hexagonal boron nitride layers